Effects of high-temperature diluted-H₂ annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO₂

• Hirohisa Hirai

• Koji Kita

Abstract

The impact of post-oxidation annealing (POA) in diluted-H 2 ambient on a 4H-SiC/SiO 2 interface was investigated with a cold wall furnace. Effective mobility (μ eff ) was extracted from lateral metal–oxide–semiconductor field-effect transistors (MOSFETs) by applying the split capacitance–voltage ( C – V ) technique to the determination of charge density and a calibration technique using two MOSFETs with different gate lengths to minimize the contribution of parasitic components. POA at 1150 °C in diluted-H 2 ambient resulted in an enhancement of μ eff compared with that for POA in N 2 ambient. It was indicated that the effects of POA in diluted H 2 should be attributed to the reduction in the density of near interface traps, which disturb the electron transportation in the inversion channel, from the measurement temperature dependence of μ eff as well as from the C – V curves of MOS capacitors fabricated on n-type SiC.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (4S), 04ER16-, 2016-03-10

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566399843900672
• NII Article ID: 210000146430
• DOI: 10.7567/jjap.55.04er16
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/55/i=4S/a=04ER16/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=4S/a=04ER16?key=crossref.229d23ae8b8d293690244c4c713b8a10
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.04ER16
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.04ER16/pdf
• Data Source:
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  • CiNii Articles
  • KAKEN