Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

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Abstract

<jats:title>Abstract</jats:title> <jats:p>Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. We observed that the laser light with energy higher than the GaN bandgap was fully absorbed in a GaN layer with a smooth film surface. On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. Laser light with energy lower than the GaN bandgap was weakly absorbed by the GaN layer and was scattered at the back surface of the wafer. Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. The threshold of trimethyl-In (TMIn) for the formation of In droplets as a function of growth temperature was determined using our in situ system. Moreover, we observed that the In droplets were removed by thermal or H<jats:sub>2</jats:sub> treatment. The results indicate that multiwavelength laser absorption and scattering enable the optimization of the growth conditions for In-rich InGaN.</jats:p>

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