Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors

• Shotaro Yoshida

• Kazuki Ikeyama

• Toshiki Yasuda

• Takashi Furuta

• Tetsuya Takeuchi

• Motoaki Iwaya

• Satoshi Kamiyama

• Isamu Akasaki

Abstract

We investigated electron and hole accumulations at GaN/AlInN/GaN interfaces by Hall effect measurement. The InN mole fraction and temperature dependences on the sheet carrier densities at the interfaces reveal that electrons and holes were induced by large positive and negative polarization charges to satisfy the charge neutrality conditions, respectively. On the basis of the above results, we then designed and demonstrated a low-resistity 10-pair Si-doped n-type AlInN/GaN distributed Bragg reflector (DBR) by using high Si doped and graded layers at the GaN/AlInN interfaces. The low-resistity n-type AlInN/GaN DBR will reduce the resistance and the internal loss in blue vertical-cavity surface emitting lasers.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (5S), 05FD10-, 2016-04-21

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003449890525568
• NII Article ID: 210000146512
• DOI: 10.7567/jjap.55.05fd10
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=5S/a=05FD10/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=5S/a=05FD10?key=crossref.550bfcafc53ee87c1506c3aad65dac3b
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.05FD10
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.05FD10/pdf
• Data Source:
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  • CiNii Articles
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