Study of radiation detection properties of GaN pn diode

• Mutsuhito Sugiura

• Maki Kushimoto

• Tadashi Mitsunari

• Kohei Yamashita

• Yoshio Honda

• Hiroshi Amano

• Yoku Inoue

• Hidenori Mimura

• Toru Aoki

• Takayuki Nakano

抄録

Recently, GaN, which has remarkable properties as a material for optical devices and high-power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I – V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (5S), 05FJ02-, 2016-03-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874820671872
• NII論文ID: 210000146544
• DOI: 10.7567/jjap.55.05fj02
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/55/i=5S/a=05FJ02/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=5S/a=05FJ02?key=crossref.64d22940c1a0c654de50c311ba43cd05
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.05FJ02
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.05FJ02/pdf
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