Structural and electrical properties and current–voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition

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<jats:title>Abstract</jats:title> <jats:p>We have deposited nitrogen-doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using CH<jats:sub>4</jats:sub>, N<jats:sub>2</jats:sub>, and Ar, and investigated the effects of N doping on the structure and the electrical, mechanical, and optical properties of the N-DLC films. We fabricated undoped DLC/p-type Si and N-DLC/p-type Si heterojunctions and examined the current–voltage characteristics of the heterojunctions. When the N<jats:sub>2</jats:sub> flow ratio was increased from 0 to 3.64%, the resistivity markedly decreased from the order of 10<jats:sup>5</jats:sup> Ω·cm to that of 10<jats:sup>−2</jats:sup> Ω·cm and the internal stress also decreased. The resistivity gradually increased with increasing N<jats:sub>2</jats:sub> flow ratio from 3.64 to 13.6%, and then it decreased at a N<jats:sub>2</jats:sub> flow ratio of 13.6%. These behaviors can be explained in terms of the clustering of sp<jats:sup>2</jats:sup> carbons and the formation of sp<jats:sup>3</jats:sup>C–N, sp<jats:sup>2</jats:sup>C=N, sp<jats:sup>1</jats:sup>C≡N, and C–H<jats:italic> <jats:sub>n</jats:sub> </jats:italic> bonds. The rectification ratio of the heterojunction using the N-DLC film prepared at 3.64% was 35.8 at ±0.5 V.</jats:p>

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