Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory

• You Yin

• Yulong Zhang

• Yousuke Takehana

• Ryota Kobayashi

• Hui Zhang

• Sumio Hosaka

Abstract

In this study, we investigated the fast switching and resistance control in a lateral GeTe-based phase-change memory (PCM). The resistivity of GeTe as a function of annealing temperature showed that it changed by more than 6 orders of magnitude in a very narrow temperature range. X-ray diffraction patterns of GeTe films indicated that GeTe had only one crystal structure, that is, face-centered cubic. It was demonstrated that the lateral device with a top conducting layer had a good performance. The operation characteristics of the GeTe-based lateral PCM device showed that it could be operated even when sub-10-ns voltage pulses were applied, making it much faster than a Ge 2 Sb 2 Te 5 -based device. The device resistance was successfully controlled by applying a staircase-like pulse, which enables the device to be used for fast multilevel storage.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (6S1), 06GG07-, 2016-04-27

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924867288064
• NII Article ID: 210000146629
• DOI: 10.7567/jjap.55.06gg07
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=6S1/a=06GG07/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=6S1/a=06GG07?key=crossref.5ee3b4c3b96a8327f856f84d00799f07
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.06GG07
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.06GG07/pdf
• Data Source:
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