Composition of thin Ta₂O₅ films deposited by different methods and the effect of humidity on their resistive switching behavior

• Cedric Mannequin

• Tohru Tsuruoka

• Tsuyoshi Hasegawa

• Masakazu Aono

抄録

The resistive switching behavior of Cu/Ta 2 O 5 /Pt atomic switches, in which the Ta 2 O 5 film was deposited by electron-beam (EB) evaporation and radio-frequency sputtering (SP), was investigated under different relative humidity (RH) levels. Fourier-transformed infrared spectroscopy and X-ray photoelectron spectroscopy measurements revealed that both films possess the oxygen-rich composition and higher water absorption capability of EB films. The Cu/Ta 2 O 5 -SP/Pt cell showed a stable, nonvolatile switching behavior in the observed RH range, whereas the Cu/Ta 2 O 5 -EB/Pt cell exhibited a similar behavior up to 50% RH, but altered from nonvolatile to volatile switching at higher RH levels. The observed volatile switching behavior of the Cu/Ta 2 O 5 -EB/Pt cell can be explained by increased ion migration, assisted by absorbed water and/or proton conduction in hydrated environments. The results indicate that the water uptake ability of the matrix film plays a crucial role in determining the resistive switching behavior of oxide-based atomic switches.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (6S1), 06GG08-, 2016-05-06

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003449890577792
• NII論文ID: 210000146630
• DOI: 10.7567/jjap.55.06gg08
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/55/i=6S1/a=06GG08/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=6S1/a=06GG08?key=crossref.0ac0ac0765a36a86a1b01c9585d4ba69
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.06GG08
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.06GG08/pdf
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