Humidity effects on the redox reactions and ionic transport in a Cu/Ta<sub>2</sub>O<sub>5</sub>/Pt atomic switch structure

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<jats:title>Abstract</jats:title> <jats:p>Redox reactions at the Cu/Ta<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> interface and subsequent Cu ion transport in a Ta<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> film have been investigated by means of cyclic voltammetry (CV) measurements. Under positive bias to the Cu electrode, Cu is preferentially oxidized to Cu<jats:sup>2+</jats:sup> and then to Cu<jats:sup>+</jats:sup>. Subsequent negative bias causes a reduction of the oxidized Cu ions at the interface. It was found that CV curves change drastically with varied relative humidity levels from 5 to 85%. At higher humidity levels, the ion concentrations and diffusion coefficients, estimated from the CV curves, suggest increased redox reaction rates and a significant contribution of proton conduction to the ionic transport. The results indicate that the redox reactions of moisture are rate-limiting and highlight the importance of water uptake by the matrix oxide film in understanding and controlling the resistive switching behavior of oxide-based atomic switches.</jats:p>

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