Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration

• Wenbo Lin

• Shinjiro Iwata

• Koichi Fukuda

• Yasuyuki Miyamoto

抄録

In this paper, we propose a method to classify the tunneling currents using simulations. The main objective is to investigate the effects of the direct source-to-drain tunneling, which is undesirable, in the case of devices with extremely short channels. We performed the classification of tunneling currents in InGaAs/GaAsSb heterojunction double-gate tunnel FETs based on this method, and we found that the direct-tunneling component increased dramatically in short-channel cases. The channel length must be 20 nm or longer, in case of InGaAs/GaAsSb heterojunction double-gate tunnel FETs, to limit the off-current within 10 pA/µm, which is required as per the ITRS LP.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (7), 070303-, 2016-06-21

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003449890620672
• NII論文ID: 210000146742
• DOI: 10.7567/jjap.55.070303
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=7/a=070303/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=7/a=070303?key=crossref.2ae922ac9fcce868213b8b63d63350bd
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.070303
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.070303/pdf
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