Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

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Abstract

<jats:title>Abstract</jats:title> <jats:p>The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O<jats:sub>2</jats:sub> fraction in the sputtering gas, <jats:italic>f</jats:italic>(O<jats:sub>2</jats:sub>) = O<jats:sub>2</jats:sub>/(Ar + O<jats:sub>2</jats:sub>). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (V<jats:sub>Ni</jats:sub>) under oxygen-rich growth conditions. In addition to V<jats:sub>Ni</jats:sub>, Li atom on the Ni site (Li<jats:sub>Ni</jats:sub>) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same <jats:italic>f</jats:italic>(O<jats:sub>2</jats:sub>). The mobility of NiO was remarkably low (around 0.1–1.0 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>) and almost independent of <jats:italic>f</jats:italic>(O<jats:sub>2</jats:sub>) or the amount of doping, reflecting the large hole effective mass.</jats:p>

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