Thickness dependence of piezoelectric properties of BiFeO₃ films fabricated using rf magnetron sputtering system

• Masaaki Aramaki

• Kento Kariya

• Takeshi Yoshimura

• Shuichi Murakami

• Norifumi Fujimura

抄録

The piezoelectric property of BiFeO 3 films prepared on a (100) LaNiO 3 /Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO 3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor ( <?CDATA $k_{\text{31,f}}^{2}$?> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="FM16050if001.gif" xlink:type="simple" /> ) increase with increasing film thickness and reach −3.2 C/m 2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (10S), 10TA16-, 2016-09-20

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360565171312902400
• NII論文ID: 210000147166
• DOI: 10.7567/jjap.55.10ta16
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/55/i=10S/a=10TA16/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=10S/a=10TA16?key=crossref.404f66e47ae4ef1ac1b23386a66f4b97
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.10TA16
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.10TA16/pdf
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