Effect of thermal annealing on the crystallization of low-temperature-grown In<sub>0.42</sub>Ga<sub>0.58</sub>As on InP substrate

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Abstract

<jats:title>Abstract</jats:title> <jats:p>We present the effect of postannealing on the crystallization of low-temperature-grown (LTG) In<jats:italic> <jats:sub>x</jats:sub> </jats:italic>Ga<jats:sub>1−</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>As on a (001) InP substrate. LTG In<jats:sub>0.42</jats:sub>Ga<jats:sub>0.58</jats:sub>As with a thickness of 1.0 µm was grown directly on the substrate by molecular beam epitaxy at 180 °C. High-resolution X-ray diffraction reciprocal space mapping and cross-sectional transmission electron microscopy (TEM) indicate that the as-grown LTG-In<jats:sub>0.42</jats:sub>Ga<jats:sub>0.58</jats:sub>As layer comprises an amorphous layer above the substrate and a columnar crystal layer on top of the amorphous layer. The TEM images indicate that the thermally induced crystallization of the amorphous In<jats:sub>0.42</jats:sub>Ga<jats:sub>0.58</jats:sub>As crystal lattice-matched to the InP substrate occurs during annealing above 400 °C.</jats:p>

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