Defect distribution and Schottky barrier at metal/Ge interfaces: Role of metal-induced gap states

• Shogo Sasaki

• Takashi Nakayama

Abstract

The defect distribution and Schottky barrier at metal/Ge interfaces were studied using first-principles calculation. It was shown that the defect density markedly increases around the interface owing to the stabilization caused by the hybridization of defect electronic states with metal-induced gap states (MIGS) and by the associated small elastic energy loss around the interface. By comparing the formation energies of various defects at a variety of metal/substrate interfaces, we showed that MIGS not only control the Schottky barrier but also promote a defect-density increase at most metal/semiconductor interfaces. Moreover, we showed that interface oxide layers block MIGS penetration into the Ge substrate and promote the observed breakdown of Fermi-level pinning.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (11), 111302-, 2016-10-03

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924867529088
• NII Article ID: 210000147222
• DOI: 10.7567/jjap.55.111302
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=11/a=111302/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=11/a=111302?key=crossref.a4ab3640a287dff95e6dbf102412f1ad
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.111302
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.111302/pdf
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