Epitaxial growth and electric properties of γ-Al<sub>2</sub>O<sub>3</sub>(110) films on β-Ga<sub>2</sub>O<sub>3</sub>(010) substrates

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Abstract

<jats:title>Abstract</jats:title> <jats:p>Epitaxial growth and electrical properties of γ-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films on β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>(010) substrates were investigated regarding the prospect of a gate oxide in a β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>-based MOSFET. The γ-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films grew along the [110] direction and inherited the oxygen sublattice from β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> resulting in the unique in-plane epitaxial relationship of γ-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> <jats:inline-formula> <jats:tex-math><?CDATA $[\bar{1}10]$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="STAP10005if001.gif" xlink:type="simple" /> </jats:inline-formula> ∥ β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>[001]. We found that the γ-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layer had a band gap of 7.0 eV and a type-I band alignment with β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> with conduction- and valence-band offsets of 1.9 and 0.5 eV, respectively. A relatively high trap density (≅ 2 × 10<jats:sup>12</jats:sup> cm<jats:sup>−2</jats:sup> eV<jats:sup>−1</jats:sup>) was found from the voltage shift of photoassisted capacitance–voltage curves measured for a Au/γ-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> MOS capacitor. These results indicate good structural and electric properties and some limitations hindering the better understanding of the role of the gate dielectrics (a γ-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> interface layer naturally crystallized from amorphous Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) in the β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> MOSFET.</jats:p>

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