Formation of indium–tin oxide ohmic contacts for β-Ga₂O₃

• Takayoshi Oshima

• Ryo Wakabayashi

• Mai Hattori

• Akihiro Hashiguchi

• Naoto Kawano

• Kohei Sasaki

• Takekazu Masui

• Akito Kuramata

• Shigenobu Yamakoshi

• Kohei Yoshimatsu

• Akira Ohtomo

• Toshiyuki Oishi

• Makoto Kasu

Abstract

Sputter-deposited indium–tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga 2 O 3 (010) substrates with a carrier concentration of 2 × 10 17 cm −3 after rapid thermal annealing in a wide range of annealing temperatures of 900–1150 °C. The formation of an ohmic contact is attributed to interdiffusion between ITO and β-Ga 2 O 3 , as evidenced by the results of transmission electron microscopy and energy-dispersive X-ray spectroscopy. The interdiffusion decreases the band gap and increases the donor concentration of β-Ga 2 O 3 at the interface, and forms an intermediate semiconductor layer desirable for carrier transport. The ITO ohmic contact is particularly useful for future β-Ga 2 O 3 devices operated at high temperatures.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (12), 1202B7-, 2016-10-26

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566399844258176
• NII Article ID: 210000147267
• DOI: 10.7567/jjap.55.1202b7
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=12/a=1202B7/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=12/a=1202B7?key=crossref.aa691c510cdde837577ba230fd5c1a5d
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.1202B7
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.1202B7/pdf
• Data Source:
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