Time-domain charge pumping on silicon-on-insulator MOS devices

• Tokinobu Watanabe

• Masahiro Hori

• Toshiaki Tsuchiya

• Akira Fujiwara

• Yukinori Ono

抄録

Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-on-insulator (SOI) MOS gated p–i–n diodes. We found that the transient electron current is strongly dependent on the polarity of the back (substrate) gate. Specifically, when the back gate is positively biased, the current peak caused by the electron trap to the interface defects was found to disappear (or significantly weaken), which was attributed to the charging effects of the trapped electrons. The present results reveal the importance of the formation of the back channel and provide important information for further detailed analysis of the charge pumping process in SOI MOS devices.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (1), 011303-, 2016-12-19

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360565171312914304
• NII論文ID: 210000147329
• DOI: 10.7567/jjap.56.011303
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/56/i=1/a=011303/pdf
• Web Site: http://stacks.iop.org/1347-4065/56/i=1/a=011303?key=crossref.7111524b72391a2d92d9fd0e92970189
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.56.011303
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.56.011303/pdf
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