Computational materials design for efficient red luminescence: InGaN codoped with Eu and the donor–acceptor pair of Mg and O

• Akira Masago

• Mitsuharu Uemoto

• Tetsuya Fukushima

• Kazunori Sato

• Hiroshi Katayama-Yoshida

抄録

We propose that InGaN is superior to GaN as a host material for GaN-based red-light-emitting diodes (LEDs). In our previous paper, we proposed that codoping of Eu and a Mg and O pair generates an efficiently luminescent center in GaN. This is caused by the quantum confinement of the quantum dot constructions generated by the codoping method. The present report illustrates that InGaN allows the expansion of such electronic structures throughout the crystal owing to spontaneous phase decomposition. This can be used for self-organized fabrication and self-regenerated products.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (2), 021001-, 2017-01-10

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360284924867613952
• NII論文ID: 210000147414
• DOI: 10.7567/jjap.56.021001
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/56/i=2/a=021001/pdf
• Web Site: http://stacks.iop.org/1347-4065/56/i=2/a=021001?key=crossref.99ff5cbf37976329e16bffea64a27402
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.56.021001
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.56.021001/pdf
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