Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis
Abstract
<jats:title>Abstract</jats:title> <jats:p>A convenient procedure for preparing D-terminated Si(111)-(1×1) and Si(110)-(1×1) by wet chemical etching was developed and applied to the vibrational analysis of these surfaces by high-resolution electron-energy loss spectroscopy (HREELS). Fully H-terminated Si(111)/(110) was first prepared in regular 40% NH<jats:sub>4</jats:sub>F/H<jats:sub>2</jats:sub>O solution, followed by immersion in saturated KF/D<jats:sub>2</jats:sub>O solution. HREELS revealed partially D-terminated H:Si(111)/(110) with the amount of deuterium termination depending on the immersion time. A series of various immersion times revealed the H/D exchange reaction kinetics, which are associated with the Si substrate etching processes on Si(111) (step-flow etching) and Si(110) (zipper reaction). The H–Si and D–Si stretching vibration frequencies as functions of the surface D fraction did not appear to change on Si(111), but on Si(110) the H–Si signal red shifted at a high D fraction. This is due to the adsorbate–adsorbate interaction, which is more intense on Si(110) because of the short nearest-neighbor distance of the adsorbates.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 56 (2), 025701-, 2017-01-12
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360284924867624192
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- NII Article ID
- 210000147440
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN