Preliminary reliability test of lateral-current-injection GaInAsP/InP membrane distributed feedback laser on Si substrate fabricated by adhesive wafer bonding

• Kai Fukuda

• Daisuke Inoue

• Takuo Hiratani

• Tomohiro Amemiya

• Nobuhiko Nishiyama

• Shigehisa Arai

Abstract

A preliminary reliability test was performed for lateral-current-injection GaInAsP/InP membrane Distributed Feedback (DFB) lasers fabricated by multi-regrowth and adhesive wafer bonding. The measurement was conducted for lasers with two different types of p-side electrode: Ti/Au and Au/Zn/Au. The device with the Au/Zn/Au electrode, which had better current–voltage ( I – V ) characteristics, showed no degradation of differential quantum efficiency and threshold current after continuous aging for 310 h at a bias current density of 5 kA/cm 2 . This result indicates that the multi-regrowth and bonding process for the GaInAsP/InP membrane DFB laser will not impact the initial reliability.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (2), 028002-, 2017-01-10

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924867628160
• NII Article ID: 210000147447
• DOI: 10.7567/jjap.56.028002
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/56/i=2/a=028002/pdf
• Web Site: http://stacks.iop.org/1347-4065/56/i=2/a=028002?key=crossref.48d712ca171df6e571dc9fc6eb0c35ed
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.56.028002
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.56.028002/pdf
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