Photoemission study on electrical dipole at SiO₂/Si and HfO₂/SiO₂interfaces

• Nobuyuki Fujimura

• Akio Ohta

• Mitsuhisa Ikeda

• Katsunori Makihara

• Seiichi Miyazaki

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (4S), 04CB04-, 2017-03-16

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360566399844383232
• NII Article ID: 210000147552
• DOI: 10.7567/jjap.56.04cb04
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/56/i=4S/a=04CB04/pdf
• Web Site: http://stacks.iop.org/1347-4065/56/i=4S/a=04CB04?key=crossref.671157884e3e3ddf014238abd8cf4d30
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN