Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 56 (4S), 04CG04-, 2017-03-06
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847874821117824
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- NII論文ID
- 210000147611
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- データソース種別
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- Crossref
- CiNii Articles
- KAKEN