Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells

• Minami, Yasuo

• Ota, Hiroto

• Lu, Xiangmeng

• Kumagai, Naoto

• Kitada, Takahiro

• Isu, Toshiro

Abstract

Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled cavity structure was fabricated by the direct wafer bonding of (001)- and (113)B-oriented epitaxial wafers for the efficient DFG of two modes in the (113)B side cavity, and two types of InGaAs multiple quantum wells (MQWs) were introduced only in the (001) side cavity as optical gain materials. The threshold behavior was clearly observed in the current–light output curve even at room temperature. Two-color lasing was successfully observed when the gain peaks of MQWs were considerably tuned to the cavity modes by the operating temperature.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (4S), 04CH01-, 2017-02-14

  The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1050845762396398592
• NII Article ID: 120006399553
• NII Article ID: 210000147615
• NII Book ID: AA12295836
• ISSN: 13474065
• ISSN: 00214922
• DOI: 10.7567/jjap.56.04ch01
• Web Site: http://repo.lib.tokushima-u.ac.jp/111095
• Web Site: http://stacks.iop.org/1347-4065/56/i=4S/a=04CH01/pdf
• Web Site: http://stacks.iop.org/1347-4065/56/i=4S/a=04CH01?key=crossref.49763e2876237e877c834cda95c67e4d
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN