Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III–V-on-insulator wafer
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 56 (4S), 04CH09-, 2017-03-24
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566399844411904
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- NII論文ID
- 210000147623
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- ISSN
- 13474065
- 00214922
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- データソース種別
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- CiNii Articles
- KAKEN