High-mobility and low-carrier-density sputtered MoS₂film formed by introducing residual sulfur during low-temperature in 3%-H₂annealing for three-dimensional ICs

• Jun’ichi Shimizu

• Takumi Ohashi

• Kentaro Matsuura

• Iriya Muneta

• Kuniyuki Kakushima

• Kazuo Tsutsui

• Hitoshi Wakabayashi

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (4S), 04CP06-, 2017-03-13

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360003449891012864
• NII論文ID: 210000147668
• DOI: 10.7567/jjap.56.04cp06
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/56/i=4S/a=04CP06/pdf
• Web Site: http://stacks.iop.org/1347-4065/56/i=4S/a=04CP06?key=crossref.d4dcd47dc0131b16359abb072fbecfff
• データソース種別:
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  • CiNii Articles