Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 56 (6S1), 06GF09-, 2017-05-09
IOP Publishing
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1360284924867830656
-
- NII論文ID
- 210000147883
-
- ISSN
- 13474065
- 00214922
-
- データソース種別
-
- Crossref
- CiNii Articles
- KAKEN