Effects of high-temperature diluted-H₂ annealing on effective mobility of SiC MOSFETs estimated by split capacitance–voltage technique

• Hirohisa Hirai

• Koji Kita

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 56 (11), 111302-, 2017-10-12

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360566399844766592
• NII Article ID: 210000148419
• DOI: 10.7567/jjap.56.111302
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/56/i=11/a=111302?key=crossref.1ccd39a28faf96d2b6fd512130983b87
• Web Site: http://stacks.iop.org/1347-4065/56/i=11/a=111302/pdf
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN