Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas

• Takashi Hamano

• Koji Eriguchi

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 57 (6S2), 06JD02-, 2018-05-29

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847874821834624
• NII Article ID: 210000149199
• DOI: 10.7567/jjap.57.06jd02
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/57/i=6S2/a=06JD02/pdf
• Web Site: http://stacks.iop.org/1347-4065/57/i=6S2/a=06JD02?key=crossref.584ba08a1333ee43e42b0a1f96c29ed7
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN