Electrical properties of ZnO:H films fabricated by RF sputtering deposition and fabrication of p-NiO/n-ZnO heterojunction devices

• Yusuke Ohteki

• Mutsumi Sugiyama

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 57 (7), 071101-, 2018-06-11

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360003449891726336
• NII Article ID: 210000149248
• DOI: 10.7567/jjap.57.071101
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/57/i=7/a=071101/pdf
• Web Site: http://stacks.iop.org/1347-4065/57/i=7/a=071101?key=crossref.a2318f13d2c8b0f980b5c3bf1b1389e7
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN