Characterization of crystalline defects in <i>β</i>-Ga₂O₃ single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography

• Satoshi Masuya

• Kohei Sasaki

• Akito Kuramata

• Shigenobu Yamakoshi

• Osamu Ueda

• Makoto Kasu

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (5), 055501-, 2019-04-12

  IOP Publishing

Details

• CRID: 1360284924859316864
• NII Article ID: 210000155651
• DOI: 10.7567/1347-4065/ab0dba
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/58/i=5/a=055501/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=5/a=055501?key=crossref.0e26a1fce21b1788a58d8256db948b56
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN