A method for high selective etch of Si₃N₄ and SiC with ion modification and chemical removal

• Sho Kumakura

• Masahiro Tabata

• Masanobu Honda

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (SE), SEEB01-, 2019-05-17

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360566399836130688
• NII論文ID: 210000156101
• DOI: 10.7567/1347-4065/ab17c7
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab17c7/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab17c7
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