InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 58 (SC), SCCD21-, 2019-05-20
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360003449882531200
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- NII Article ID
- 210000156114
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN