Highly reliable threshold switching behavior of amorphous Ga₂Te₃ films deposited by RF sputtering

• Dayoon Lee

• Taeho Kim

• Hyunchul Sohn

収録刊行物

• Applied Physics Express

  Applied Physics Express 12 (8), 085504-, 2019-07-05

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566399836689408
• NII論文ID: 210000156540
• DOI: 10.7567/1882-0786/ab2cd9
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://iopscience.iop.org/article/10.7567/1882-0786/ab2cd9
• Web Site: http://iopscience.iop.org/article/10.7567/1882-0786/ab2cd9/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1882-0786/ab2cd9/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1882-0786/ab2cd9
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