Effect of electric field on formation energies of point defects around metal/SiC and metal/GaN interfaces: first-principles study

• Riki Nagasawa

• Takashi Nakayama

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (9), 091006-, 2019-08-23

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360284924859574400
• NII Article ID: 210000156878
• DOI: 10.7567/1347-4065/ab3839
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab3839
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab3839/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab3839/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab3839
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN