Reduction of process temperature for Si surface flattening utilizing Ar/H₂ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator

• Shun-ichiro Ohmi

• Yusuke Horiuchi

• Shin Ishimatsu

• Sohya Kudoh

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 59 (SC), SCCB02-, 2019-12-04

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566399836397696
• NII Article ID: 210000157439
• DOI: 10.7567/1347-4065/ab5173
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab5173
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab5173/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab5173/pdf
• Web Site: https://iopscience.iop.org/article/10.7567/1347-4065/ab5173
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN