InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 59 (SG), SGGE03-, 2020-02-03
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360566399836432128
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- NII Article ID
- 210000157638
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN