1.2 kV silicon carbide Schottky barrier diode embedded MOSFETs with extension structure and titanium-based single contact
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 59 (2), 026502-, 2020-02-01
IOP Publishing
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詳細情報
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- CRID
- 1360284924859792000
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- NII論文ID
- 210000157925
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- ISSN
- 13474065
- 00214922
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- データソース種別
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- Crossref
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