Fabrication and Investigation of Carbon Nanotube Transistor by the Dip Coat Method

• KAZUNORI ICHIKAWA

  Kobe City College of Technology Japan

• AKIRA MATSUBARA

  Kobe City College of Technology Japan

• YOSHIYUKI SUDA

  Toyohashi University of Technology Japan

抄録

We have proposed a convenient fabrication technique for a carbon nanotubes (CNTs) transistor. The dip coat method using a metallic solution was employed to deposit metal catalysts of CNTs on the source and drain electrodes on a SiO 2 ‐coated Si substrate at a low temperature. This method does not require a vacuum system or a long process time. After fabricating the CNTs using chemical vapor deposition, we evaluated the morphology of the CNTs using scanning electron microscopy and their electrical properties as a CNT field effect transistor (FET). The CNTs formed bridges between the source and drain electrodes. The field effect mobility of the CNT‐FET was measured to be 3000 cm 2 /Vs based on the transfer curve. On the basis of the electrical properties, a CNT‐FET with high field effect mobility can be obtained.

収録刊行物

• Electronics and Communications in Japan

  Electronics and Communications in Japan 99 (9), 79-84, 2016-08-12

  Wiley

キーワード

• Applied Mathematics
• Electrical and Electronic Engineering
• Computer Networks and Communications
• General Physics and Astronomy
• Signal Processing

詳細情報

• CRID: 1360848655022551680
• NII論文ID: 210000163061
• DOI: 10.1002/ecj.11859
• ISSN: 19429541
• ISSN: 19429533
• Web Site: https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fecj.11859
• Web Site: https://onlinelibrary.wiley.com/doi/pdf/10.1002/ecj.11859
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