Analysis of millimeter‐wave amplifier module with surface wave mode transmission line by FDTD electromagnetic‐semiconductor device co‐simulation

Abstract

<jats:title>Abstract</jats:title><jats:p>Direct analysis of a millimeter‐wave amplifier module by using FDTD electromagnetic and semiconductor device co‐simulation technique is demonstrated. The millimeter‐wave amplifier module consists of an HFET and planar dielectric transmission lines (PDTL) for the 60‐GHz region. A PDTL with a surface wave transmission mode has a low‐loss transmission characteristic in the millimeter‐wave region when a low‐loss ceramic substrate is used. However, the transmission wave of the PDTL tends to be scattered by irregular structures and impedance mismatching. Furthermore, it is predicted that scattered waves reflected at the edges of the substrate will interfere with incident and transmission waves on the PDTL. Using the co‐simulation technique, the influence of the scattering waves is investigated in detail for the amplifier module. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(3): 8–15, 2010; Published online in Wiley InterScience (<jats:ext-link xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="http://www.interscience.wiley.com">www.interscience.wiley.com</jats:ext-link>). DOI 10.1002/ecj.10211</jats:p>

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