Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2

• Hiroyuki Nagasawa

• Yoh-ichi Yamaguchi

収録刊行物

• Applied Surface Science

  Applied Surface Science 82-83 405-409, 1994-12

  Elsevier BV

キーワード

• Surfaces, Coatings and Films
• Condensed Matter Physics
• Surfaces and Interfaces
• General Physics and Astronomy
• General Chemistry

詳細情報

• CRID: 1360579818734896640
• NII論文ID: 30002966838
• DOI: 10.1016/0169-4332(94)90249-6
• ISSN: 01694332
• Web Site: https://api.elsevier.com/content/article/PII:0169433294902496?httpAccept=text/xml
• Web Site: https://api.elsevier.com/content/article/PII:0169433294902496?httpAccept=text/plain
• データソース種別:
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