Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

• H. Tsuchida

• I. Kamata

• T. Jikimoto

• K. Izumi

収録刊行物

• Journal of Crystal Growth

  Journal of Crystal Growth 237-239 1206-1212, 2002-04

  Elsevier BV

キーワード

• Materials Chemistry
• Inorganic Chemistry
• Condensed Matter Physics

詳細情報

• CRID: 1362825896071188096
• NII論文ID: 30004612641
• DOI: 10.1016/s0022-0248(01)02173-x
• ISSN: 00220248
• ISSN: http://id.crossref.org/issn/00220248
• Web Site: https://api.elsevier.com/content/article/PII:S002202480102173X?httpAccept=text/xml
• Web Site: https://api.elsevier.com/content/article/PII:S002202480102173X?httpAccept=text/plain
• データソース種別:
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