Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

• Hiroshi Murakami

• Tsunemori Asahi

• Hiroshi Amano

• Kazumasa Hiramatsu

• Nobuhiko Sawaki

• Isamu Akasaki

収録刊行物

• Journal of Crystal Growth

  Journal of Crystal Growth 115 (1-4), 648-651, 1991-12

  Elsevier BV

キーワード

• Materials Chemistry
• Inorganic Chemistry
• Condensed Matter Physics

詳細情報

• CRID: 1360011143634919296
• NII論文ID: 30004623943
• DOI: 10.1016/0022-0248(91)90820-u
• ISSN: 00220248
• Web Site: https://api.elsevier.com/content/article/PII:002202489190820U?httpAccept=text/xml
• Web Site: https://api.elsevier.com/content/article/PII:002202489190820U?httpAccept=text/plain
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