Effect of CO<sub>2</sub> concentration on YBa<sub>2</sub>Cu<sub>3</sub>O<sub>6+<i>x</i></sub> formation

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<jats:title>Abstract</jats:title><jats:p>Two reversible reactions are involved in YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>6+<jats:italic>x</jats:italic></jats:sub> formation: a reaction between BaCO<jats:sub>3</jats:sub> and CuO forming BaCuO<jats:sub>2</jats:sub> and CO<jats:sub>2</jats:sub>, and a reaction of BaCuO<jats:sub>2</jats:sub> with Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and CuO forming YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>6</jats:sub> which undergoes phase transformation to YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>6+<jats:italic>x</jats:italic></jats:sub> upon cooling. In‐situ isothermal time resolved HT‐XRD of a thin film was used to quantify the effect of CO<jats:sub>2</jats:sub> on the kinetics of the first reaction. Increased CO<jats:sub>2</jats:sub> partial pressure shifts the reactions to higher temperatures. At high CO<jats:sub>2</jats:sub> partial pressure (>2 vol. %), the rate of the first reaction becomes essentially a step process with a very high activation energy. Noninstantaneous nucleation of the reaction products occurs at low CO<jats:sub>2</jats:sub> partial pressure (0.5–1%) and temperatures (700°C). The data fit a 2‐D diffusion‐controlled mechanism with a zero nucleation rate for BaCO<jats:sub>3</jats:sub> decomposition and a second‐order nucleation rate for YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>6</jats:sub> formation. A comparison of the kinetics of a thin film (10 mm) as determined by HT‐XRD with those of a thick sample (2 mm) determined by TG revealed that the transport of CO<jats:sub>2</jats:sub> within the sample pores and to the ambient gas significantly affect the decomposition of BaCO<jats:sub>3</jats:sub>. For example, the formation of YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>6</jats:sub> in a thick precursor layer occurs in the 840 to 940°C range, exceeding by about 200°C that in which it is formed in thin films.</jats:p>

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