THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE <font>Si</font> GRAINS BY CONSTRAINED GROWTH MODEL

DOI Web Site 被引用文献4件
  • KUNJI CHEN
    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • KAI CHEN
    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • PEIGAO HAN
    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • HECHENG ZOU
    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • ZHONGYUAN MA
    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • XINFAN HUANG
    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

抄録

<jats:p> Size-controlled nanocrystalline silicon ( nc - Si ) has been prepared from a - SiN <jats:sub> x </jats:sub>/ a - Si:H/a - SiN <jats:sub> x </jats:sub> ( 'a' standing for amorphous) sandwich structures by thermal annealing. Transmission electron microscope analyses show that the mean size and the grain size distribution (GSD) of the nc - Si are controlled by the annealing conditions and the a - Si sublayer thickness. Based on our theoretical model of constrained crystallization, we interpret the phenomena of the growth halt of nc - Si and higher crystallization temperature for the thinner a - Si sublayers. The experimental results show that constrained crystallization method is promising to achieve uniform and high density nc - Si array which can be used in the future nano-devices. </jats:p>

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