Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate

• M. Micovic

• M. Matloubian

• M. Hu

• D.S. Harvey

• C. Nguyen

• P. Janke

収録刊行物

• Electronics Letters

  Electronics Letters 36 (4), 357-, 2000

  Institution of Engineering and Technology (IET)

キーワード

• Electrical and Electronic Engineering

詳細情報

• CRID: 1360018298313354496
• NII論文ID: 30015040497
• DOI: 10.1049/el:20000270
• ISSN: 00135194
• Web Site: https://digital-library.theiet.org/content/journals/10.1049/el_20000270?crawler=true&mimetype=application/pdf
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