Angular distribution of HD produced in the abstraction reaction by incident D atoms on the monohydrided Si(100)

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  • Y. Takamine
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku, Toyohashi 441, Japan
  • A. Namiki
    Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804, Japan

抄録

<jats:p>The abstraction of chemisorbed hydrogen on the Si(100) surface by atomic deuterium has been studied by direct observation of the reaction products HD. The angular distribution of the HD yield is found to be shifted towards the specular direction of the incident D atoms by about 20° with respect to the surface normal. The strong forward HD desorption is compared with the thermally associative desorption of D2 peaking towards the surface normal. A direct Eley–Rideal mechanism is suggested for the D abstraction reaction of the chemisorbed H atoms on the Si(100) surfaces.</jats:p>

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