Point defect generation during high temperature annealing of the Si-SiO2 interface

• R. A. B. Devine

  Centre National d’Etudes des Télécommunications, France Télécom, BP 98, 38243 Meylan, France

• D. Mathiot

  Centre National d’Etudes des Télécommunications, France Télécom, BP 98, 38243 Meylan, France

• W. L. Warren

  Sandia National Laboratories, Albuquerque, New Mexico 87185

• D. M. Fleetwood

  Sandia National Laboratories, Albuquerque, New Mexico 87185

• B. Aspar

  LETI/DTA, Centre d’Etudes Nucléaires de Grenoble, BP 85 X, 38041 Grenoble Cedex, France

抄録

Spectroscopic identification of the microscopic defects responsible for annealing induced degradation of the oxide in Si/SiO2/Si structures is presented. Hole injection or x irradiation reveals the presence of oxygen-vacancy centers and oxygen-vacancy center/Si interstitial complexes in the oxide following annealing. O related donors in the Si substrate are also present. These defects result from the diffusion of O from the SiO2 network into the Si; the primary driving force for O diffusion is the difference in the chemical potential of the O in the two phases.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 63 (21), 2926-2928, 1993-11-22

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1362262944903736704
• NII論文ID: 30015751808
• DOI: 10.1063/1.110275
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/63/21/2926/18499572/2926_1_online.pdf
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