Surface and interface structures of S-passivated GaAs(111) studied by soft x-ray standing waves

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  • Munehiro Sugiyama
    NTT Interdisciplinary Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan
  • Satoshi Maeyama
    NTT Interdisciplinary Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan
  • Masaharu Oshima
    NTT Interdisciplinary Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan
  • Haruhiro Oigawa
    Institute of Material Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
  • Yasuo Nannichi
    Institute of Material Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
  • Hiroo Hashizume
    Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 227, Japan

抄録

<jats:p>Surface and interface structures of S-passivated GaAs(111)A and (111)B with and without CaF2 overlayers have been investigated using the soft x-ray standing-wave technique. On the GaAs(111)A surface S atoms are located on top of the first layer Ga atoms, while on the GaAs(111)B surface S atoms replace the first layer As atoms. This is in agreement with the photoemission results. It is found that CaF2 deposition and post-annealing does not change the position of S atoms. A well-ordered S structure for S/GaAs(111)B is maintained, indicating a high stability of S—Ga bonds. This is in contrast to the low coherent fraction for the S interlayer atoms observed from the CaF2/S/GaAs(111)A system.</jats:p>

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