Structure of (√3×√3) <i>R</i> 30°-B at the Si interface studied by grazing incidence x-ray diffraction

• Koichi Akimoto

  Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki 305, Japan

• Ichiro Hirosawa

  Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki 305, Japan

• Toru Tatsumi

  Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki 305, Japan

• Hiroyuki Hirayama

  Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki 305, Japan

• Jun’ichiro Mizuki

  Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki 305, Japan

• Junji Matsui

  Fundamental Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki 305, Japan

抄録

The boron-induced ( 7/8 × 7/8 )R30° reconstruction at the Si interface has been investigated by grazing incidence x-ray diffraction. The in-plane projected struture is found from the structure factors near zero perpendicular momentum transfer. At the a-Si/Si (111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a ( 7/8 × 7/8 )R30° lattice and the boronsilicon bond is contracted compared with the siliconsilicon bond. Even at the interface between a solid phase epitaxial Si (111) layer and a Si (111) substrate, the boron-induced ( 7/8 × 7/8 )R30° reconstruction has also been observed and the structure is similar to that observed at the a-Si/Si (111) interface.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 56 (13), 1225-1227, 1990-03-26

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1363107369259038976
• NII論文ID: 30015766020
• NII書誌ID: AA10993015
• DOI: 10.1063/1.102522
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/56/13/1225/18475790/1225_1_online.pdf
• データソース種別:
  • Crossref
  • CiNii Articles