Metalorganic chemical vapor deposition using a single solution source for high <i>J</i> <i>c</i> Y1Ba2Cu3O7−<i>x</i> superconducting films

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  • S. Matsuno
    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation, 1-1-57, Miyashimo, Sagamihara, Kanagawa 229, Japan
  • F. Uchikawa
    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation, 1-1-57, Miyashimo, Sagamihara, Kanagawa 229, Japan
  • S. Utsunomiya
    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation, 1-1-57, Miyashimo, Sagamihara, Kanagawa 229, Japan
  • S. Nakabayashi
    Super-GM, 5-14-10, Nishitenma, Kitaku, Osaka 530, Japan

抄録

<jats:p>High Jc Y1Ba2Cu3O7−x superconducting thin and thick films were prepared onto SrTiO3 (100) substrates at 700 °C by metalorganic chemical vapor deposition (MOCVD) technique using a single solution source. A mixture of Y, Ba, and Cu β-diketonate chelates was dissolved in tetrahydrofuran as a solution source. Zero resistance transition temperature and critical current density at 77 K, 0 T for thin and thick films were 90 K and 2.73×106 A/cm2, 91 K and 3.1×105 A/cm2, respectively. X-ray diffraction measurement indicated that the thin film grew epitaxially with the c-axis orientation perpendicular to the surface of the substrate and the thick films mainly consisted of a-axis orientation.  </jats:p>

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