Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

DOI PDF 被引用文献8件
  • Y. H. Seo
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • H.-J. Lee
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • H. I. Jeon
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • D. H. Oh
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • K. S. Nahm
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • Y. H. Lee
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • E.-K. Suh
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • H. J. Lee
    Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Korea
  • Y. G. Kwang
    Department of Physics, Wonkwang University, Iri 570-749, Korea

抄録

<jats:p>Porous silicon layers prepared by anodic dissolutions of silicon wafers in aqueous HF solutions reveal either crystalline phase or intermediate phase between microcrystalline and amorphous phases, depending on the anodization conditions. The configurations of hydrogen and oxygen atoms near the surface of microstructures are directly related to the light emitting characteristics of porous silicon layers. We observed that oxidation leads to the shifts of SiHn stretching modes to higher frequencies and enhanced photoluminescence intensity, which can be correlated with a charge transfer within O—Si—H bonds. We also observed that chemical treatments in trichloroethylene have similar effects as thermal oxidation.</jats:p>

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